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| 2N4403 / MMBT4403 2N4403 MMBT4403 C E C B TO-92 E SOT-23 Mark: 2T B PNP General Purpose Amplifier This device is designed for use as a general purpose amplifier and switch requiring collector currents to 500 mA. Absolute Maximum Ratings* Symbol VCEO VCBO VEBO IC TJ, Tstg Collector-Base Voltage Emitter-Base Voltage Collector Current - Continuous TA = 25C unless otherwise noted Parameter Collector-Emitter Voltage Value 40 40 5.0 600 -55 to +150 Units V V V mA C Operating and Storage Junction Temperature Range *These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. NOTES: 1) These ratings are based on a maximum junction temperature of 150 degrees C. 2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. Thermal Characteristics Symbol PD RJC RJA TA = 25C unless otherwise noted Characteristic Total Device Dissipation Derate above 25C Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient 2N4403 625 5.0 83.3 200 Max *MMBT4403 350 2.8 357 Units mW mW/C C/W C/W *Device mounted on FR-4 PCB 1.6" X 1.6" X 0.06." (c) 2001 Fairchild Semiconductor Corporation 2N4403/MMBT4403, Rev. C 2N4403 / MMBT4403 PNP General Purpose Amplifier (continued) Electrical Characteristics Symbol Parameter TA = 25C unless otherwise noted Test Conditions Min Max Units OFF CHARACTERISTICS V(BR)CEO V(BR)CBO V(BR)EBO IBEX ICEX Collector-Emitter Breakdown Voltage* Collector-Base Breakdown Voltage Emitter-Base Breakdown Voltage Base Cutoff Current Collector Cutoff Current IC = 1.0 mA, IB = 0 IC = 0.1 mA, IE = 0 IE = 0.1 A, IC = 0 VCE = 35 V, VEB = 0.4 V VCE = 35 V, VBE = 0.4 V 40 40 5.0 0.1 0.1 V V V A A ON CHARACTERISTICS hFE DC Current Gain IC = 0.1 mA, VCE = 1.0 V IC = 1.0 mA, VCE = 1.0 V IC = 10 mA, VCE = 1.0 V IC = 150 mA, VCE = 2.0 V* IC = 500 mA, VCE = 2.0 V* IC = 150 mA, IB = 15 mA IC = 500 mA, IB = 50 mA IC = 150 mA, IB = 15 mA* IC = 500 mA, IB = 50 mA 30 60 100 100 20 300 0.4 0.75 0.95 1.3 V V V V VCE(sat) VBE(sat) Collector-Emitter Saturation Voltage* Base-Emitter Saturation Voltage 0.75 SMALL SIGNAL CHARACTERISTICS fT Ccb Ceb hie hre hfe hoe Current Gain - Bandwidth Product Collector-Base Capacitance Emitter-Base Capacitance Input Impedance Voltage Feedback Ratio Small-Signal Current Gain Output Admittance IC = 20 mA, VCE = 10 V, f = 100 MHz VCB = 10 V, IE = 0, f = 140 kHz VBE = 0.5 V, IC = 0, f = 140 kHz IC = 1.0 mA, VCE = 10 V, f = 1.0 kHz IC = 1.0 mA, VCE = 10 V, f = 1.0 kHz IC = 1.0 mA, VCE = 10 V, f = 1.0 kHz IC = 1.0 mA, VCE = 10 V, f = 1.0 kHz 200 8.5 30 1.5 0.1 60 1.0 15 8.0 500 100 mhos MHz pF pF k x 10 -4 SWITCHING CHARACTERISTICS td tr ts tf Delay Time Rise Time Storage Time Fall Time VCC = 30 V, IC = 150 mA, IB1 = 15 mA VCC = 30 V, IC = 150 mA IB1 = IB2 = 15 mA 15 20 225 30 ns ns ns ns *Pulse Test: Pulse Width 300 ms, Duty Cycle 2.0% 2N4403 / MMBT4403 PNP General Purpose Amplifier (continued) Typical Characteristics VCESAT - COLLECTOR EMITTE R VOLTAGE (V) h FE - TYPICAL PULSED CURRENT GAIN Typical Pulsed Current Gain vs Collector Current 500 VCE = 5V Collector-Emitter Saturation Voltage vs Collector Current 0.5 = 10 0.4 0.3 0.2 0.1 0 125 C - 40 C 400 300 200 100 0 0.1 125 C 25 C 25 C - 40 C 0.3 1 3 10 30 100 I C - COLLECTOR CURRENT (mA) 300 1 10 100 I C - COLLECTOR CURRE NT (mA) 500 V BE( ON)- BAS E EMITTER ON VOLTAGE (V) V BESAT - BASE EMITTER VOLTAGE (V) Base-Emitter Saturation Voltage vs Collector Current 1 - 40 C Base Emitter ON Voltage vs Collector Current 1 0.8 0.6 0.4 0.2 0 0.1 - 40 C 0.8 0.6 0.4 0.2 0 25 C 25 C 125 C = 10 125C VCE = 5V 1 10 100 I C - COLLECTOR CURRENT (mA) 500 1 10 I C - COLLECTOR CURRE NT (mA) 25 Collector-Cutoff Current vs Ambient Temperature I CBO - COLLE CTOR CURRENT (nA) 100 V CB = 35V 10 Input and Output Capacitance vs Reverse Bias Voltage 20 CAPACITANCE (pF) 16 12 C ib 1 8 4 0 0.1 C ob 0.1 0.01 25 50 75 100 T A - AMBIE NT TEMP ERATURE ( C) 125 1 10 REVERSE BIAS VOLTAGE (V) 50 2N4403 / MMBT4403 PNP General Purpose Amplifier (continued) Typical Characteristics (continued) Switching Times vs Collector Current 250 I B1 = I B2 = 200 V cc = 15 V Ic 10 Turn On and Turn Off Times vs Collector Current 500 I B1 = I B2 = 400 V cc = 15 V Ic 10 TIME (nS) TIME (nS) 150 100 tr tf ts 300 200 t off 50 td 100 0 10 t on 0 10 100 I C - COLLECTOR CURRENT (mA) 1000 100 I C - COLLECTOR CURRENT (mA) 1000 Rise Time vs Collector and Turn On Base Currents I B1 - TURN 0N BASE CURRENT (mA) 50 PD - POWER DISSIPATION (W) 1 Power Dissipation vs Ambient Temperature 20 10 5 30 ns t r = 15 V 0.75 SOT-223 TO-92 0.5 SOT-23 0.25 2 60 ns 1 10 100 I C - COLLECTOR CURRENT (mA) 500 0 0 25 50 75 100 TEMPERATURE ( oC) 125 150 2N4403 / MMBT4403 PNP General Purpose Amplifier (continued) Typical Common Emitter Characteristics (f = 1.0kHz) CHAR. RELATIVE TO VALUES AT I C= -10mA CHAR. RELATIVE TO VALUES AT VCE = -10V Common Emitter Characteristics 5 hoe 2 1 0.5 h ie h re h fe Common Emitter Characteristics 1.3 h re h ie h fe hoe 1.2 h re and hoe 1.1 1 h ie 0.9 h fe 0.8 -4 I C = -10mA T A = 25oC -20 0.2 0.1 _ V CE = -10 V T A = 25 oC 1 _ _ _ _ 2 5 10 20 I C - COLLECTOR CURRENT (mA) _ 50 -8 -12 -16 V CE - COLLECTOR VOLTAGE (V) CHAR. RELATIVE TO VALUES AT TA = 25oC Common Emitter Characteristics 1.5 I C = -10mA 1.4 V = -10 V CE 1.3 1.2 1.1 hoe 1 0.9 0.8 0.7 0.6 0.5 -40 h fe -20 0 20 40 60 80 T A - AMBIENT TEMPERATURE ( o C) 100 h re h ie h fe h ie h re hoe 2N4403 / MMBT4403 PNP General Purpose Amplifier (continued) Test Circuits - 30 V 200 1.0 K 0 - 16 V 200ns 50 FIGURE 1: Saturated Turn-On Switching Time Test Circuit 1.5 V - 6.0 V 1 K NOTE: BVEBO = 5.0 V 37 1.0 K 0 - 30 V 200ns 50 FIGURE 2: Saturated Turn-Off Switching Time Test Circuit TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACExTM BottomlessTM CoolFETTM CROSSVOLTTM DenseTrenchTM DOMETM EcoSPARKTM E2CMOSTM EnSignaTM FACTTM FACT Quiet SeriesTM DISCLAIMER FAST (R) FASTrTM FRFETTM GlobalOptoisolatorTM GTOTM HiSeCTM ISOPLANARTM LittleFETTM MicroFETTM MicroPakTM MICROWIRETM OPTOLOGICTM OPTOPLANARTM PACMANTM POPTM Power247TM PowerTrench (R) QFETTM QSTM QT OptoelectronicsTM Quiet SeriesTM SILENT SWITCHER (R) SMART STARTTM STAR*POWERTM StealthTM SuperSOTTM-3 SuperSOTTM-6 SuperSOTTM-8 SyncFETTM TinyLogicTM TruTranslationTM UHCTM UltraFET (R) VCXTM STAR*POWER is used under license FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. LIFE SUPPORT POLICY FAIRCHILD'S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or 2. A critical component is any component of a life systems which, (a) are intended for surgical implant into support device or system whose failure to perform can the body, or (b) support or sustain life, or (c) whose be reasonably expected to cause the failure of the life failure to perform when properly used in accordance support device or system, or to affect its safety or with instructions for use provided in the labeling, can be effectiveness. reasonably expected to result in significant injury to the user. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Advance Information Product Status Formative or In Design Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. Preliminary First Production No Identification Needed Full Production Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Rev. H4 |
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